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公开(公告)号：US20200020729A1
公开(公告)日：2020-01-16
申请号：US16579060
申请日：2019-09-23
发明人： Tzu-Jui Wang , Keng-Yu Chou , Chun-Hao Chuang , Ming-Chieh Hsu , Ren-Jie Lin , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L27/146 , H01L31/0232
摘要： A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.
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公开(公告)号：US20230207719A1
公开(公告)日：2023-06-29
申请号：US17749354
申请日：2022-05-20
发明人： Hung-Chang Chien , Jung-I Lin , Ming-Chieh Hsu , Kuan-Chieh Huang , Tzu-Jui Wang , Shih-Min Huang , Chen-Jong Wang , Dun-Nian Yaung , Yi-Shin Chu , Hsiang-Lin Chen
IPC分类号： H01L31/107 , H01L31/18 , H01L31/02
CPC分类号： H01L31/107 , H01L31/1808 , H01L31/02027
摘要： In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.
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公开(公告)号：US10468443B2
公开(公告)日：2019-11-05
申请号：US16223247
申请日：2018-12-18
发明人： Tzu-Jui Wang , Keng-Yu Chou , Chun-Hao Chuang , Ming-Chieh Hsu , Ren-Jie Lin , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L21/00 , H01L27/146 , H01L31/0232
摘要： A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.
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公开(公告)号：US20230261021A1
公开(公告)日：2023-08-17
申请号：US17750784
申请日：2022-05-23
发明人： Tzu-Jui Wang , Dun-Nian Yaung , Chen-Jong Wang , Ming-Chieh Hsu , Wei-Cheng Hsu , Yuichiro Yamashita
IPC分类号： H01L27/146 , H04N5/3745
CPC分类号： H01L27/1463 , H01L27/14614 , H01L27/14643 , H01L27/14689 , H04N5/3745
摘要： Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.
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公开(公告)号：US11121159B2
公开(公告)日：2021-09-14
申请号：US16579060
申请日：2019-09-23
发明人： Tzu-Jui Wang , Keng-Yu Chou , Chun-Hao Chuang , Ming-Chieh Hsu , Ren-Jie Lin , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L31/0232 , H01L27/146
摘要： A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.
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公开(公告)号：US20190123085A1
公开(公告)日：2019-04-25
申请号：US16223247
申请日：2018-12-18
发明人： Tzu-Jui Wang , Keng-Yu Chou , Chun-Hao Chuang , Ming-Chieh Hsu , Ren-Jie Lin , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14665 , H01L27/14685 , H01L31/02327
摘要： A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.
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