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公开(公告)号：US20240371685A1
公开(公告)日：2024-11-07
申请号：US18775749
申请日：2024-07-17
Inventor： Yen-Liang Lin , Chia-Wen Zhong , Yao-Wen Chang , Min-Chang Ching , Kuo-Liang Lu , Cheng-Yuan Tsai , Ru-Liang Lee
IPC: H01L21/768 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/687
Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a wafer chuck configured to hold a substrate. Further, a bell jar structure is arranged over the wafer chuck such that an opening of the bell jar structure faces the wafer chuck. A plasma coil is arranged over the bell jar structure. An oxygen source coupled to the processing chamber and configured to input oxygen gas into the processing chamber.
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公开(公告)号：US12211737B2
公开(公告)日：2025-01-28
申请号：US17459137
申请日：2021-08-27
Inventor： Yen-Liang Lin , Chia-Wen Zhong , Yao-Wen Chang , Min-Chang Ching , Kuo-Liang Lu , Cheng-Yuan Tsai , Ru-Liang Lee
IPC: H01L21/768 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/687
Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a conductive structure on a substrate. A removal process is performed to remove a portion of the dielectric layer to expose a portion of the conductive structure. The substrate is transported into a cleaning chamber having a wafer chuck below a bell jar structure. A cleaning process is performed to clean the exposed portion of the conductive structure by turning on a noble gas source to introduce a noble gas within the cleaning chamber, turning on an oxygen gas source to introduce oxygen within the cleaning chamber, applying a first bias to a plasma coil to form a plasma gas, and applying a second bias to the wafer chuck. The substrate is removed from the cleaning chamber. A conductive layer is formed over the dielectric layer and coupled to the conductive structure.
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