公开(公告)号：US20180149982A1

公开(公告)日：2018-05-31

申请号：US15398839

申请日：2017-01-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Ming CHANG ,  Ru-Gun LIU ,  Shuo-Yen CHOU ,  Chien-Wen LAI ,  Zengqin ZHAO

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/34

CPC classification number: G03F7/70641 ,  G03F7/038 ,  G03F7/039 ,  G03F7/2004 ,  G03F7/34

Abstract: A pattern modification method and a patterning process are provided. The method includes extracting a first pattern and a second pattern to be respectively transferred to a first target portion and a second target portion of a resist layer. The method also includes obtaining regional information of the first target portion and the second target portion. The method includes determining a first desired focus position for transferring the first pattern based on the regional information. In addition, the method includes determining a second desired focus position for transferring the second pattern based on the regional information. The method includes modifying one or both of the first pattern and the second pattern. As a result, focus positions of the first pattern and the second pattern are shifted to be substantially and respectively positioned at the first desired focus position and the second desired focus position during an exposure operation.