公开(公告)号：US10770401B2

公开(公告)日：2020-09-08

申请号：US16715215

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cherng Jeng ,  Shyh-Wei Cheng ,  Yun Chang ,  Chen-Chieh Chiang ,  Jung-Chi Jeng

IPC: H01L23/538 ,  H01L21/50 ,  H01L21/762 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

公开(公告)号：US10510671B2

公开(公告)日：2019-12-17

申请号：US15884760

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cherng Jeng ,  Shyh-Wei Cheng ,  Yun Chang ,  Chen-Chieh Chiang ,  Jung-Chi Jeng

IPC: H01L23/538 ,  H01L21/50 ,  H01L21/762 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a trench. The trench has an inner wall and a bottom surface. The method includes forming a second mask layer in the trench. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The second trench exposes the bottom surface and is over a first portion of the dielectric layer. The remaining second mask layer covers the inner wall. The method includes removing the first portion, the first mask layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.