公开(公告)号：US20210118728A1

公开(公告)日：2021-04-22

申请号：US16655961

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng SHIH ,  Tze-Liang LEE ,  Jen-Hung WANG ,  Yu-Kai LIN ,  Su-Jen SUNG

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.