公开(公告)号：US20250022879A1

公开(公告)日：2025-01-16

申请号：US18351099

申请日：2023-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Jui Chiu ,  Te-Yang Lai ,  An Lee ,  Jyun-Yi Wu ,  Shu-Han Chen ,  Da-Yuan Lee ,  Chi On Chui

IPC: H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/775

Abstract: A method includes forming a first semiconductor channel region and a second semiconductor channel region, with the second semiconductor channel region overlapping the first semiconductor channel region, forming a first gate dielectric on the first semiconductor channel region, and forming a second gate dielectric on the second semiconductor channel region. A dipole dopant is incorporated into a first one of the first gate dielectric and the second gate dielectric to a higher atomic percentage, and a second one of the first gate dielectric and the second gate dielectric has a lower atomic percentage of the dipole dopant. A gate electrode is formed on both of the first gate dielectric and the second gate dielectric. The gate electrode and the first gate dielectric form parts of a first transistor, and the gate electrode and the second gate dielectric form parts of a second transistor.