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公开(公告)号：US11615946B2
公开(公告)日：2023-03-28
申请号：US16422071
申请日：2019-05-24
发明人： Jr-Sheng Chen , An-Chi Li , Shih-Che Huang , Chih-Hsien Hsu , Zhi-Hao Huang , Alex Wang , Yu-Pei Chiang , Chun Yan Chen
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32 , H01L21/67 , H01L21/768
摘要： Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.
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公开(公告)号：US20200075294A1
公开(公告)日：2020-03-05
申请号：US16422071
申请日：2019-05-24
发明人： Jr-Sheng CHEN , An-Chi Li , Shih-Che Huang , Chih-Hsien Hsu , Zhi-Hao Huang , Alex Wang , Yu-Pei Chiang , Chen-Chun Yan
摘要： Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.
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公开(公告)号：US20200043705A1
公开(公告)日：2020-02-06
申请号：US16525330
申请日：2019-07-29
发明人： Jr-Sheng CHEN , An-Chi Li , Shih-Che Huang , Chih-Hsien Hsu , Zhi-Hao Huang , Alex Wang , Yu-Pei Chiang , Chen-Chun Yan
IPC分类号： H01J37/32
摘要： Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.
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公开(公告)号：US11769652B2
公开(公告)日：2023-09-26
申请号：US16525330
申请日：2019-07-29
发明人： Jr-Sheng Chen , An-Chi Li , Shih-Che Huang , Chih-Hsien Hsu , Zhi-Hao Huang , Ming Chih Wang , Yu-Pei Chiang , Chun Yan Chen
CPC分类号： H01J37/32449 , G06F30/00 , H01J37/3211 , H01J2237/3341 , H01J2237/3343 , H01L21/67069
摘要： Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.
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