公开(公告)号：US20230047641A1

公开(公告)日：2023-02-16

申请号：US17654886

申请日：2022-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Yu YEN ,  Ko-Feng CHEN ,  Keng-Chu LIN

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure describes a semiconductor device that includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The source/drain region includes (i) a first epitaxial structure embedded in the substrate; (ii) a nitride layer on the first epitaxial structure; and a second epitaxial structure on the first epitaxial structure. The semiconductor device also includes a gate structure formed on the nanostructures.