公开(公告)号：US20220285264A1

公开(公告)日：2022-09-08

申请号：US17470680

申请日：2021-09-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Yang Hsiao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Hsiao Ching-Wen ,  Yao-Chun Chuang

IPC: H01L23/522 ,  H01L23/528 ,  H01L49/02 ,  H01L21/768

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

公开(公告)号：US12107041B2

公开(公告)日：2024-10-01

申请号：US18359011

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Yang Hsiao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Hsiao Ching-Wen ,  Yao-Chun Chuang

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L23/5223 ,  H01L21/76843 ,  H01L23/528 ,  H01L28/40 ,  H01L28/75 ,  H01L28/84 ,  H01L28/91 ,  H10B12/033

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

公开(公告)号：US20230369199A1

公开(公告)日：2023-11-16

申请号：US18359011

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Yang Hsiao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Hsiao Ching-Wen ,  Yao-Chun Chuang

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L21/76843 ,  H01L28/40 ,  H01L23/528 ,  H01L28/91 ,  H10B12/033

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

公开(公告)号：US11728262B2

公开(公告)日：2023-08-15

申请号：US17470680

申请日：2021-09-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Yang Hsiao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Hsiao Ching-Wen ,  Yao-Chun Chuang

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L21/76843 ,  H01L23/528 ,  H01L28/40 ,  H01L28/91 ,  H10B12/033

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

公开(公告)号：US20240379529A1

公开(公告)日：2024-11-14

申请号：US18779664

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Yang Hsiao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Hsiao Ching-Wen ,  Yao-Chun Chuang

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H10B12/00

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.