公开(公告)号：US20230017512A1

公开(公告)日：2023-01-19

申请号：US17377861

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tze-Chung LIN ,  Pinyen LIN ,  Fang-Wei LEE ,  Li-Te LIN ,  Han-yu LIN

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/66

Abstract: The present disclosure describes a method includes forming a fin structure including a fin bottom portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer and a second semiconductor layer, in which the first semiconductor layer includes germanium. The method further includes etching the fin structure to form an opening, delivering a primary etchant and a germanium-containing gas to the fin structure through the opening, and etching a portion of the second semiconductor layer in the opening with the primary etchant and the germanium-containing gas.