公开(公告)号：US11532692B2

公开(公告)日：2022-12-20

申请号：US17140766

申请日：2021-01-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun Kai Tzeng ,  Cheng Jen Lin ,  Yung-Ching Chao ,  Ming-Da Cheng ,  Mirng-Ji Lii

IPC分类号： H01L27/08 ,  H01L49/02 ,  H01L21/311 ,  H01L23/522

摘要： A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.

公开(公告)号：US20210151550A1

公开(公告)日：2021-05-20

申请号：US17140766

申请日：2021-01-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun Kai Tzeng ,  Cheng Jen Lin ,  Yung-Ching Chao ,  Ming-Da Cheng ,  Mirng-Ji Lii

IPC分类号： H01L49/02 ,  H01L21/311 ,  H01L23/522

摘要： A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.

公开(公告)号：US20210288009A1

公开(公告)日：2021-09-16

申请号：US17333187

申请日：2021-05-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ming-Da Cheng ,  Yung-Ching Chao ,  Chun Kai Tzeng ,  Cheng Jen Lin ,  Chin Wei Kang ,  Yu-Feng Chen ,  Mirng-Ji Lii

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/31

摘要： A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.