公开(公告)号：US20150200133A1

公开(公告)日：2015-07-16

申请号：US14153831

申请日：2014-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHOU ,  Chung-Chi KO ,  Po-Cheng SHIH ,  Chih-Hung SUN ,  Kuang-Yuan HSU ,  Joung-Wei LIOU ,  Tze-Liang LEE

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76868 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Embodiments of the disclosure provide a method for forming a semiconductor device structure. The method includes forming a dielectric layer over a semiconductor substrate. The method also includes applying a carbon-containing material over the dielectric layer. The method further includes irradiating the dielectric layer and the carbon-containing material with a light to repair the dielectric layer, and the light has a wavelength greater than about 450 nm.

Abstract translation: 本公开的实施例提供了一种用于形成半导体器件结构的方法。 该方法包括在半导体衬底上形成电介质层。 该方法还包括在电介质层上涂覆含碳材料。 该方法还包括用光照射介电层和含碳材料以修复电介质层，并且光具有大于约450nm的波长。