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公开(公告)号：US20220320017A1
公开(公告)日：2022-10-06
申请号：US17458778
申请日：2021-08-27
发明人： Meng-Han Lin , Chia-En Huang
IPC分类号： H01L23/58 , H01L23/00 , H01L27/11597
摘要： A method for fabricating memory devices includes forming a first portion of a memory device that includes a first device portion and one or more first interface portions. The first device portion includes a plurality of first memory strings, each of which includes a plurality of first memory cells vertically separated from one another. Each of the one or more first interface portions, laterally abutted to one side of the first device portion, includes a plurality of first word lines (WLs). The method further includes forming a plurality of first source lines (SLs) and a plurality of first bit lines (BLs) in the first device portion. The method further includes forming a first seal ring structure that laterally encloses both the first device portion and the first interface portion concurrently with forming the pluralities of SLs and BLs.
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公开(公告)号：US20240363555A1
公开(公告)日：2024-10-31
申请号：US18769121
申请日：2024-07-10
发明人： Meng-Han Lin , Chia-En Huang
CPC分类号： H01L23/585 , H01L23/562 , H01L23/564 , H10B51/20
摘要： A method for fabricating memory devices includes forming a first portion of a memory device that includes a first device portion and one or more first interface portions. The first device portion includes a plurality of first memory strings, each of which includes a plurality of first memory cells vertically separated from one another. Each of the one or more first interface portions, laterally abutted to one side of the first device portion, includes a plurality of first word lines (WLs). The method further includes forming a plurality of first source lines (SLs) and a plurality of first bit lines (BLs) in the first device portion. The method further includes forming a first seal ring structure that laterally encloses both the first device portion and the first interface portion concurrently with forming the pluralities of SLs and BLs.
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公开(公告)号：US20240006348A1
公开(公告)日：2024-01-04
申请号：US18361227
申请日：2023-07-28
发明人： Meng-Han Lin , Chia-En Huang
CPC分类号： H01L23/585 , H01L23/564 , H01L23/562 , H10B51/20
摘要： A method for fabricating memory devices includes forming a first portion of a memory device that includes a first device portion and one or more first interface portions. The first device portion includes a plurality of first memory strings, each of which includes a plurality of first memory cells vertically separated from one another. Each of the one or more first interface portions, laterally abutted to one side of the first device portion, includes a plurality of first word lines (WLs). The method further includes forming a plurality of first source lines (SLs) and a plurality of first bit lines (BLs) in the first device portion. The method further includes forming a first seal ring structure that laterally encloses both the first device portion and the first interface portion concurrently with forming the pluralities of SLs and BLs.
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公开(公告)号：US12068263B2
公开(公告)日：2024-08-20
申请号：US18361227
申请日：2023-07-28
发明人： Meng-Han Lin , Chia-En Huang
CPC分类号： H01L23/585 , H01L23/562 , H01L23/564 , H10B51/20
摘要： A method for fabricating memory devices includes forming a first portion of a memory device that includes a first device portion and one or more first interface portions. The first device portion includes a plurality of first memory strings, each of which includes a plurality of first memory cells vertically separated from one another. Each of the one or more first interface portions, laterally abutted to one side of the first device portion, includes a plurality of first word lines (WLs). The method further includes forming a plurality of first source lines (SLs) and a plurality of first bit lines (BLs) in the first device portion. The method further includes forming a first seal ring structure that laterally encloses both the first device portion and the first interface portion concurrently with forming the pluralities of SLs and BLs.
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公开(公告)号：US11749623B2
公开(公告)日：2023-09-05
申请号：US17458778
申请日：2021-08-27
发明人： Meng-Han Lin , Chia-En Huang
CPC分类号： H01L23/585 , H01L23/562 , H01L23/564 , H10B51/20
摘要： A method for fabricating memory devices includes forming a first portion of a memory device that includes a first device portion and one or more first interface portions. The first device portion includes a plurality of first memory strings, each of which includes a plurality of first memory cells vertically separated from one another. Each of the one or more first interface portions, laterally abutted to one side of the first device portion, includes a plurality of first word lines (WLs). The method further includes forming a plurality of first source lines (SLs) and a plurality of first bit lines (BLs) in the first device portion. The method further includes forming a first seal ring structure that laterally encloses both the first device portion and the first interface portion concurrently with forming the pluralities of SLs and BLs.
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