公开(公告)号：US3244567A

公开(公告)日：1966-04-05

申请号：US22228862

申请日：1962-09-10

Applicant: TRW SEMICONDUCTORS INC

Inventor： CRISHAL JOAN M ,  LA CHAPELLE THEODORE J ,  WILCOX WILLIAM R ,  SANDSTROM JAMES P

IPC: C30B31/06 ,  H01L21/00

CPC classification number: C30B31/06 ,  H01L21/00 ,  Y10S252/951

公开(公告)号：US3620932A

公开(公告)日：1971-11-16

申请号：US3620932D

申请日：1969-05-05

Applicant: TRW SEMICONDUCTORS INC

Inventor： CRISHAL JOAN M ,  RICE EDWARD J

IPC: H01L21/00 ,  H01L23/485 ,  C23B5/48

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A beam lead for a semiconductor device and a method of fabricating the beam lead thereon. A semiconductor wafer is provided, a plurality of semiconductor devices being disposed thereon, with a line being scribed between the semiconductor devices. Element images are formed upon the devices by photolithographic techniques and a metal layer deposited on the wafer making contact with the metal contacts of the devices. Thick metal leads are deposited upon the metal layer and an etchant is used to isolate the beam leads after which all photosensitive material is stripped away.

公开(公告)号：US3476620A

公开(公告)日：1969-11-04

申请号：US3476620D

申请日：1968-10-10

Applicant: TRW SEMICONDUCTORS INC

Inventor： CRISHAL JOAN M ,  SANDSTROM JAMES P

IPC: C23C16/40 ,  C30B31/06 ,  H01L21/225 ,  H01L21/316 ,  H01L23/485 ,  H01L7/34 ,  H01L1/10

CPC classification number: H01L21/31625 ,  C23C16/401 ,  C30B29/06 ,  C30B31/06 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2255 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00