公开(公告)号：US20040056352A1

公开(公告)日：2004-03-25

申请号：US10671712

申请日：2003-09-29

申请人： TOKYO TUNGSTEN CO., LTD.

发明人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

IPC分类号： H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC分类号： B22F3/045 ,  B22F3/02 ,  B22F2998/10 ,  H01L21/4871 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F3/26 ,  H01L2924/00

摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a CunullMo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a CunullMo composite, and rolling the CunullMo composite into a sheet substrate. In the isostatic molding process, at least two or more plates 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

摘要翻译： 用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为 钼。 散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。 在等静压成型工艺中，至少两个或更多个板27,29,31,33,35和37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到空间中 由这些板27,29,31,33,35和37形成，并用柔性覆盖物（例如橡胶介质39等）覆盖Mo粉末压块以制备复合材料，然后将所得复合材料压入 在其上施加有外部等静压力抵靠柔性盖，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板之间的复合材料压缩成Mo压坯。