公开(公告)号：US20140202386A1

公开(公告)日：2014-07-24

申请号：US14163115

申请日：2014-01-24

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA ,  Yoshiyuki Kobayashi

IPC: C23C4/12

Abstract: A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

Abstract translation: 基板处理装置包括：室，用于接收基板并设置在该室中的基座，将预定气体供应到该室中的气体供应源;以及通过等离子体处理该基板的高频电源。 基座包括：第一陶瓷基座构件，其包括使冷却剂通过的流动通道;形成在第一陶瓷基底构件的主表面和基板接收侧的侧表面上的第一导电层和堆叠在第一陶瓷基底构件的基板接收侧的侧表面 第一导电层并且被配置为静电吸引其上接收的晶片。 流路的体积等于或大于第一陶瓷基体的体积。 高频电源被配置为向第一导电层提供高频功率。

公开(公告)号：US20220084867A1

公开(公告)日：2022-03-17

申请号：US17534150

申请日：2021-11-23

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA ,  Naoyuki SATOH ,  Tatsuo NISHITA

IPC: H01L21/683 ,  H01J37/32 ,  C23C4/134

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

公开(公告)号：US20200211885A1

公开(公告)日：2020-07-02

申请号：US16721086

申请日：2019-12-19

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA ,  Naoyuki SATOH ,  Tatsuo NISHITA

IPC: H01L21/683 ,  H01J37/32 ,  C23C4/134

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

公开(公告)号：US20140251212A1

公开(公告)日：2014-09-11

申请号：US14187415

申请日：2014-02-24

Applicant: Tokyo Electron Limited

Inventor： Yoshiyuki KOBAYASHI ,  Satoshi TAGA

IPC: B05B17/06

CPC classification number: B05B17/0676 ,  B05B7/1445 ,  B05B7/1463 ,  B05B7/1626 ,  C23C4/02 ,  C23C4/12

Abstract: A hopper includes a container to contain a powdered material having a diameter of 0.1 through 10 micrometers, a pressure control part configured to create a periodic pressure difference inside the container, and a vibration exciter configured to vibrate the container. The container has a hole provided in a bottom thereof to feed the powdered material downward.

Abstract translation: 漏斗包括容纳直径为0.1至10微米的粉末材料的容器，构造成在容器内部产生周期性压力差的压力控制部分和构造成使容器振动的振动激励器。 容器在其底部设有孔，以将粉末材料向下供给。

公开(公告)号：US20240321559A1

公开(公告)日：2024-09-26

申请号：US18609340

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA

IPC: H01J37/32 ,  G05D7/06 ,  G05D9/12

CPC classification number: H01J37/32522 ,  G05D7/0676 ,  G05D9/12 ,  H01J2237/002

Abstract: A technique for reducing a pressure at which a heat transfer medium is supplied to a flow path is provided. In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a plasma generator, a temperature adjustment target, and a supply. The supply supplies a heat transfer medium to the flow path and includes a first tank, a second tank, a pump, and a heat exchanger. The first tank stores the heat transfer medium and is connected to the flow path via a first pipe. The second tank stores the heat transfer medium, is connected to the flow path via a second pipe, and is connected to the first tank via a third pipe. The second tank is disposed at a position lower than a position of the first tank.

公开(公告)号：US20240038507A1

公开(公告)日：2024-02-01

申请号：US18360384

申请日：2023-07-27

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J2237/2007

Abstract: A disclosed substrate support is used in a plasma processing apparatus. The substrate support includes a base, an electrostatic chuck, and a plurality of electrodes. The base is formed of ceramic. The electrostatic chuck is disposed on the base. The electrostatic chuck includes a central region, an annular region, and a coating layer. The central region is configured to support a substrate placed thereon. The annular region extends to surround the central region and is configured to support an edge ring placed thereon. The coating layer is formed of ceramic. The coating layer is configuring a surface of the electrostatic chuck. The plurality of electrodes include a first metal layer and a second metal layer. The first metal layer is disposed between the central region and the base. The second metal layer is disposed between the annular region and the base.

公开(公告)号：US20230065448A1

公开(公告)日：2023-03-02

申请号：US18047248

申请日：2022-10-17

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAGA ,  Naoyuki SATOH ,  Tatsuo NISHITA

IPC: H01L21/683 ,  C23C4/134 ,  H01J37/32

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

公开(公告)号：US20190013230A1

公开(公告)日：2019-01-10

申请号：US16028699

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAGA ,  Yoshiyuki KOBAYASHI ,  Kazuya NAGASEKI

IPC: H01L21/683 ,  H01J37/32 ,  C23C4/134 ,  C23C4/11

Abstract: Disclosed is a method of manufacturing an electrostatic chuck configured to attract a substrate by applying a voltage to a first electrode layer. The method includes forming the first electrode layer on a first resin layer on a base and thermally spraying ceramics or a ceramics-containing material on the first electrode layer. The thermally spraying the ceramic or the ceramics-containing material includes transporting powder of a thermal spray material, introduced into a nozzle from a feeder, by a plasma generation gas and spraying the powder from an opening in a tip end portion of the nozzle, dissociating the sprayed plasma generation gas by electric power of 500 W to 10 kW to generate plasma having a common axis with the nozzle, and forming the powder of the thermal spray material into a liquid phase by the generated plasma to form a film on the first electrode layer.