公开(公告)号：US11430704B2

公开(公告)日：2022-08-30

申请号：US16502310

申请日：2019-07-03

申请人： TOKYO ELECTRON LIMITED

发明人： Kanzo Kato

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  H01L21/027 ,  G03F7/38

摘要： A substrate processing apparatus, including: a development part configured to develop a substrate on which an exposed resist film formed to form a pattern on a surface of the substrate; a heat plate configured to mount and heat the substrate on which the resist film formed on the heat plate before the development is performed; a distribution acquisition part configured to optically acquire a size distribution of a dimension of the pattern on the surface of the substrate; and a determination part configured to determine whether abnormality has occurred in a mounting state of the substrate on the heat plate, based on the size distribution of the dimension of the pattern.

公开(公告)号：US10395998B2

公开(公告)日：2019-08-27

申请号：US15195126

申请日：2016-06-28

申请人： TOKYO ELECTRON LIMITED

发明人： Kanzo Kato

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  H01L21/027 ,  G03F7/38

摘要： A substrate processing apparatus, including: a development part configured to develop a substrate on which an exposed resist film formed to form a pattern on a surface of the substrate; a heat plate configured to mount and heat the substrate on which the resist film formed on the heat plate before the development is performed; a distribution acquisition part configured to optically acquire a size distribution of a dimension of the pattern on the surface of the substrate, and a determination part configured to determine whether abnormality has occurred in a mounting state of the substrate on the heat plate, based on the size distribution of the dimension of the pattern.