公开(公告)号：US20160043722A1

公开(公告)日：2016-02-11

申请号：US14819077

申请日：2015-08-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yaqi HU ,  Yanli FAN

IPC: H03K19/0185

CPC classification number: H03K19/018507 ,  H03K19/00315

Abstract: Driving a back-gate of a transistor with a follower signal that corresponds to an information signal. At least some of the illustrative embodiments are methods including: passing an information signal from a source terminal to an drain terminal of a main field effect transistor (FET), the information signal has a peak-to-peak voltage; generating a follower signal that corresponds to the information signal, the follower signal electrically isolated from the information signal, and the follower signal has a peak-to-peak voltage lower than the peak-to-peak voltage of the information signal; and applying the follower signal to a back-gate of the main FET.

Abstract translation: 用对应于信息信号的跟随信号驱动晶体管的背栅极。 至少一些说明性实施例是包括以下方法：将信号信号从源极端子传递到主场效应晶体管（FET）的漏极端子，信息信号具有峰 - 峰值电压; 产生与信息信号相对应的从动信号，与信息信号电隔离的从动信号，从动信号具有低于信号信号的峰 - 峰电压的峰峰值电压; 以及将跟随器信号施加到主FET的背栅极。