公开(公告)号：US20250063755A1

公开(公告)日：2025-02-20

申请号：US18937600

申请日：2024-11-05

Applicant: Texas Instruments Incorporated

Inventor： Dong Seup LEE ,  Jungwoo JOH ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer, and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.

公开(公告)号：US20190157091A1

公开(公告)日：2019-05-23

申请号：US16163602

申请日：2018-10-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE ,  Yoshikazu KONDO ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/02 ,  H01L29/778 ,  H01L29/51 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66

Abstract: An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.

公开(公告)号：US20230369482A1

公开(公告)日：2023-11-16

申请号：US18357431

申请日：2023-07-24

Applicant: Texas Instruments Incorporated

Inventor： Dong Seup LEE ,  Jungwoo JOH ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06 ,  H01L21/265 ,  H01L29/20 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7786 ,  H01L29/41775 ,  H01L29/0843 ,  H01L29/0603 ,  H01L21/2654 ,  H01L29/2003 ,  H01L21/26546 ,  H01L29/66462 ,  H01L29/66431 ,  H01L29/0607 ,  H01L29/42316 ,  H01L29/0891

Abstract: In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer; and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.

公开(公告)号：US20220181449A1

公开(公告)日：2022-06-09

申请号：US17115562

申请日：2020-12-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE

IPC: H01L29/20 ,  H01L29/51 ,  H01L29/06

Abstract: A semiconductor structure includes a first transistor including a gate structure, a drain, and a source. The gate structure of the first transistor includes a nitride-based semiconductor layer. The semiconductor structure further includes a second transistor including a gate structure, a drain, and a source. The gate structure of the second transistor also includes a nitride-based semiconductor layer. The nitride-based semiconductor layer of the first transistor's gate structure is continuous with the nitride-based semiconductor layer of the second transistor's gate structure.

公开(公告)号：US20210159329A1

公开(公告)日：2021-05-27

申请号：US17165697

申请日：2021-02-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE ,  Jungwoo JOH ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/08 ,  H01L21/265 ,  H01L29/66 ,  H01L29/417

Abstract: In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer; and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.

公开(公告)号：US20200185499A1

公开(公告)日：2020-06-11

申请号：US16216874

申请日：2018-12-11

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE ,  Jungwoo JOH ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: In some examples, a transistor comprises a gallium nitride (GaN) layer; a first GaN-based alloy layer having a top side and disposed on the GaN layer; a second GaN-based alloy layer disposed on the first GaN-based alloy layer, wherein the second GaN-based alloy layer covers a first portion of the top side; and a source contact structure, a drain contact structure, and a gate contact structure, wherein the source, drain, and gate contact structures are supported by the first GaN-based alloy layer.

公开(公告)号：US20200161461A1

公开(公告)日：2020-05-21

申请号：US16194794

申请日：2018-11-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup LEE ,  Jungwoo JOH ,  Pinghai HAO ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423

Abstract: In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer; and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.