公开(公告)号：US09389286B2

公开(公告)日：2016-07-12

申请号：US14189211

申请日：2014-02-25

Applicant: TDK CORPORATION

Inventor： Hiroshi Yamazaki ,  Yoshiyuki Mizoguchi ,  Satoshi Abe ,  Homare Tokida ,  Toshiyuki Ayukawa

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G01R33/093

Abstract: A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract translation: 磁传感器包括MR元件和偏置场产生单元。 MR元件包括具有在与X方向平行的方向上固定的磁化的磁化固定层，具有根据外部磁场的X方向分量而变化的磁化的自由层和介于磁化之间的非磁性层 钉扎层和自由层。 磁化钉扎层，非磁性层和自由层在Y方向上堆叠成相邻。 自由层在由磁化固定层产生的与X方向平行的方向上接收层间耦合磁场。 偏置场产生单元向自由层施加偏置磁场。 偏置磁场包括与层间耦合磁场的方向相反的方向的第一分量和Z方向上的第二分量。