公开(公告)号：US11588020B2

公开(公告)日：2023-02-21

申请号：US17353477

申请日：2021-06-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： I-Hsiu Wang ,  Yean-Zhaw Chen ,  Ying-Ting Hsia ,  Jhao-Ping Jiang ,  Chun-Chih Cheng

IPC: H01L29/08 ,  H01L21/8238 ,  H01L21/768 ,  H01L23/532 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/306

Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions on the semiconductor substrate, and a gate structure on the semiconductor substrate and between the pair of source/drain regions. The gate structure includes a first metal layer and a second metal layer in contact with the first metal layer. A sidewall of the first metal layer and a top surface of the semiconductor substrate form a first included angle, a sidewall of the second metal layer and the top surface of the semiconductor substrate form a second included angle. The second included angle is different from the first included angle.

公开(公告)号：US11043559B2

公开(公告)日：2021-06-22

申请号：US16717451

申请日：2019-12-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： I-Hsiu Wang ,  Yean-Zhaw Chen ,  Ying-Ting Hsia ,  Jhao-Ping Jiang ,  Chun-Chih Cheng

IPC: H01L29/08 ,  H01L21/8238 ,  H01L21/768 ,  H01L23/532 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/306

Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer is formed over the semiconductor substrate. A plurality of dopants is formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing of the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion. An underneath layer is patterned to form a hole in the underneath layer using the patterned first semiconductive layer as a mask to pattern. A sidewall profile of the hole in the underneath layer is controlled by the first sidewall profile of the first portion of the first semiconductive layer.

公开(公告)号：US10510839B2

公开(公告)日：2019-12-17

申请号：US16043513

申请日：2018-07-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： I-Hsiu Wang ,  Yean-Zhaw Chen ,  Ying-Ting Hsia ,  Jhao-Ping Jiang ,  Chun-Chih Cheng

IPC: H01L21/308 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/768 ,  H01L23/532 ,  H01L29/66

Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.