公开(公告)号：US20210208508A1

公开(公告)日：2021-07-08

申请号：US17208791

申请日：2021-03-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih CHEN ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Wei-Chun YEN

IPC: G03F7/20 ,  H05G2/00 ,  G02B5/08

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

公开(公告)号：US20200004167A1

公开(公告)日：2020-01-02

申请号：US16415642

申请日：2019-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih CHEN ,  Sheng-Kang YU ,  Chi YANG ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.