METHOD OF MEASURING THE JUNCTION TEMPERATURE OF A SEMICONDUCTOR DEVICE

    公开(公告)号:US20240288319A1

    公开(公告)日:2024-08-29

    申请号:US18681795

    申请日:2021-08-31

    IPC分类号: G01K7/01 H03K17/687

    CPC分类号: G01K7/01 H03K17/687

    摘要: A method of measuring the junction temperature, Tj, of a semiconductor switching element in real-time, and a device for carrying out such a measurement are described. A plurality of measurements of a first and a second, different, temperature-sensitive parameter (TSP) of the semiconductor switching element while recording other quantities determining the semiconductor switching element operating point is taken. The junction temperature value based on the measured values of the first temperature-sensitive parameter and the at least one second temperature-sensitive parameter are calculated and compared to determine the actual junction temperature Tj. Each of the plurality of measurements of the first temperature-sensitive parameter and the at least one second temperature-sensitive parameter is synchronized with a switching event of the semiconductor switching element.