摘要:
Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.
摘要:
Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.
摘要:
In a photoresist composition suitable for forming a photoresist pattern having a high profile angle, and a method of forming a photoresist pattern using the same, the photoresist composition includes an alkali-soluble resin, a quinone diazide containing compound, a compound represented by Formula 1, and a solvent: wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or C6-12 aryl.
摘要:
A photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a display substrate are disclosed. A photoresist composition includes an alkali-soluble resin, a quinone diazide-based compound, a multivalent phenol-based compound, and a solvent. Therefore, photosensitivity for light having a wavelength in a range of about 392 nm to about 417 nm may be improved, and reliability of forming a photo pattern and a thin film pattern using the photoresist composition may be improved.
摘要:
A photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a display substrate are disclosed. A photoresist composition includes an alkali-soluble resin, a quinone diazide-based compound, a multivalent phenol-based compound, and a solvent. Therefore, photosensitivity for light having a wavelength in a range of about 392 nm to about 417 nm may be improved, and reliability of forming a photo pattern and a thin film pattern using the photoresist composition may be improved.
摘要:
In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of γ-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.