Photoresist composition and patterning method thereof
    1.
    发明授权
    Photoresist composition and patterning method thereof 有权
    光刻胶组合物及其图案化方法

    公开(公告)号:US08211614B2

    公开(公告)日:2012-07-03

    申请号:US12376107

    申请日:2007-08-02

    IPC分类号: G03F7/004 G03F7/30

    CPC分类号: G03F7/0236

    摘要: Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.

    摘要翻译: 公开了具有理想的物理性质如光敏度,分辨率,残留膜比和涂布性能的抗蚀剂组合物,并且由于在半导体工艺和平板显示过程中由于优异的透光率而形成具有期望的轮廓和深度聚焦的图案 使用248nm(KrF)的短波长,即使将抗蚀剂组合物施加到非化学放大抗蚀剂上。 光致抗蚀剂组合物包含酚醛清漆基树脂A,光敏剂B和低吸光度的低分子物质C. 具有低吸光度的低分子物质的吸光度低于在248nm,193nm和157nm的一个或多个波长处的酚醛清漆基树脂的吸光度,并且光致抗蚀剂组合物在248nm或更小的波长下使用 。

    PHOTORESIST COMPOSITION AND PATTERNING METHOD THEREOF
    2.
    发明申请
    PHOTORESIST COMPOSITION AND PATTERNING METHOD THEREOF 有权
    光电组合物及其方法

    公开(公告)号:US20100203444A1

    公开(公告)日:2010-08-12

    申请号:US12376107

    申请日:2007-08-02

    IPC分类号: G03F7/20 G03F7/004

    CPC分类号: G03F7/0236

    摘要: Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.

    摘要翻译: 公开了具有理想的物理性质如光敏度,分辨率,残留膜比和涂布性能的抗蚀剂组合物,并且由于在半导体工艺和平板显示过程中由于优异的透光率而形成具有期望的轮廓和深度聚焦的图案 使用248nm(KrF)的短波长,即使将抗蚀剂组合物施加到非化学放大抗蚀剂上。 光致抗蚀剂组合物包含酚醛清漆基树脂A,光敏剂B和低吸光度的低分子物质C. 具有低吸光度的低分子物质的吸光度低于在248nm,193nm和157nm的一个或多个波长处的酚醛清漆基树脂的吸光度,并且光致抗蚀剂组合物在248nm或更小的波长下使用 。

    Methods of forming a photosensitive film
    6.
    发明授权
    Methods of forming a photosensitive film 有权
    形成感光膜的方法

    公开(公告)号:US08227182B2

    公开(公告)日:2012-07-24

    申请号:US12539041

    申请日:2009-08-11

    CPC分类号: G03F7/168

    摘要: In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of γ-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.

    摘要翻译: 在较薄的组合物和形成感光膜的方法中,较薄的组合物包括约50至约90重量%的丙二醇单甲醚乙酸酯,约1至约20重量%的丙二醇单甲醚,约1至约 10重量%的γ-丁内酯和约1至约20重量%的乙酸正丁酯。 更薄的组合物可以具有适当的挥发性和改善溶解各种感光材料的能力,因此较薄的组合物可有效地用于边缘珠漂洗工艺,返工工艺或预润湿工艺。