Abstract:
A video coding system and circuit emphasizing visual perception are presented, which mainly include a video coding module and a video analysis module. A video frame is respectively input into the video coding module and the video analysis module. The video coding module performs a coding process on the input video frame, the video analysis module analyzes the input video frame to generate a quantization parameter adjustment value, and then the video coding module adjusts each coding parameter with the quantization parameter adjustment value. In this manner, a more efficient compression can be performed on the video frame, and the compressed video frame still maintains good image quality.
Abstract:
White-light emitting devices and methods for manufacturing the same. The white-light emitting device emits white light comprising a first color component with first wavelength, a second color component with a second wavelength, and a third color component with a third wavelength. The first wavelength is shorter than the second wavelength. The second wavelength is shorter than the third wavelength. The white-light emitting device comprises a baseboard. A first light emitting device emitting the first color component and a second light emitting device emitting a second color component are disposed on the baseboard. A transparent passivation layer with a substantially planar surface is formed on the baseboard. A second light emitting device is disposed on the transparent passivation layer. The second light emitting device emits the third color component which is responsive to the first and the second color components.
Abstract:
A method and apparatus for encoding of video data incorporating loop filtering are disclosed. The method and apparatus according to an embodiment of the present invention determines an initial loop filter level for a frame of the video data according to quality setting of the frame. The information associated with the initial loop filter level is incorporated in the bitstream corresponding to compressed video data. The loop filtering is applied to a macroblock without the need to wait for the whole frame reconstruction to complete. In another embodiment according to the present invention, the initial loop filter level may be refined according to stability associated with the frame. In yet another embodiment according to the present invention, the method may include determining whether segment mode is on or off and determining a frame-level or segment-level initial loop filter level accordingly.
Abstract:
The present invention discloses a high-brightness light emitting diode (LED), which primarily includes a LED epitaxial layer with a reflective layer and a Si substrate with an adhesive layer. The LED epitaxial layer is bonded with the Si substrate by attaching the reflective layer and the adhesive layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode are deposed on the front side of the LED. In the present invention, the reflective layer, the adhesive layer and the ohmic contact electrodes preferably perform single function, so that the most appropriate materials can be applied. Therefore, the LED of the present invention can exhibit excellent brightness.
Abstract:
The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b) forming LED epitaxial layers on said temporary substrate, wherein said LED epitaxial layers with pn junction; c) providing a permanent substrate; d) forming a layered structure between said permanent substrate and said LED epitaxial layers, wherein said layered structure has properties of reflection, adhesion, diffusion barrier and buffer; and e) forming a first electrode and a second electrode on proper position to supply enough energy for said LED epitaxial layers. The LED manufactured in accordance with the present invention can exhibit high brightness and excellent mechanical strength during manufacturing.
Abstract:
A white-light emitting device comprising a first PRS-LED and a second PRS-LED. The first PRS-LED has a primary light source to emit blue light and a secondary light source to emit red light responsive to the blue light; and the second PRS-LED has a primary light source to emit green light and a secondary light source for emitting red light responsive to the green light. Each of the primary light sources is made from an InGaN layer disposed between a p-type GaN layer and an n-type GaN layer. The secondary light sources are made from AlGaInP. The primary light source and the secondary light source can be disposed on opposite sides of a sapphire substrate. Alternatively, the second light source is disposed on the n-type GaN layer of the primary light source. The second light sources may comprise micro-rods of AlGaInP of same or different compositions.
Abstract:
White-light emitting devices and methods for manufacturing the same. The white-light emitting device emits white light comprising a first color component with first wavelength, a second color component with a second wavelength, and a third color component with a third wavelength. The first wavelength is shorter than the second wavelength. The second wavelength is shorter than the third wavelength. The white-light emitting device comprises a baseboard. A first light emitting device emitting the first color component and a second light emitting device emitting a second color component are disposed on the baseboard. A transparent passivation layer with a substantially planar surface is formed on the baseboard. A second light emitting device is disposed on the transparent passivation layer. The second light emitting device emits the third color component which is responsive to the first and the second color components.
Abstract:
The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.
Abstract:
A white-light emitting device comprising a first PRS-LED and a second PRS-LED. The first PRS-LED has a primary light source to emit blue light and a secondary light source to emit red light responsive to the blue light; and the second PRS-LED has a primary light source to emit green light and a secondary light source for emitting red light responsive to the green light. Each of the primary light sources is made from an InGaN layer disposed between a p-type GaN layer and an n-type GaN layer. The secondary light sources are made from AlGaInP. The primary light source and the secondary light source can be disposed on opposite sides of a sapphire substrate. Alternatively, the second light source is disposed on the n-type GaN layer of the primary light source. The second light sources may comprise micro-rods of AlGaInP of same or different compositions.
Abstract:
A white-light emitting device comprising a first PRS-LED and a second PRS-LED. The first PRS-LED has a primary light source to emit blue light and a secondary light source to emit red light responsive to the blue light; and the second PRS-LED has a primary light source to emit green light and a secondary light source for emitting red light responsive to the green light. Each of the primary light sources is made from an InGaN layer disposed between a p-type GaN layer and an n-type GaN layer. The secondary light sources are made from AlGaInP. The primary light source and the secondary light source can be disposed on opposite sides of a sapphire substrate. Alternatively, the second light source is disposed on the n-type GaN layer of the primary light source. The second light sources may comprise micro-rods of AlGaInP of same or different compositions.