公开(公告)号：US20110210765A1

公开(公告)日：2011-09-01

申请号：US13089206

申请日：2011-04-18

申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

IPC分类号： H03K3/01

CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

公开(公告)号：US08350602B2

公开(公告)日：2013-01-08

申请号：US13089206

申请日：2011-04-18

申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

IPC分类号： H03K3/01

CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

公开(公告)号：US07968935B2

公开(公告)日：2011-06-28

申请号：US12197961

申请日：2008-08-25

申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

公开(公告)号：US20100044777A1

公开(公告)日：2010-02-25

申请号：US12197961

申请日：2008-08-25

申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。