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1.发明申请公开(公告)号：US20230018855A1
公开(公告)日：2023-01-19
申请号：US17879834
申请日：2022-08-03
发明人： CHEN-FU CHU , SHIH-KAI CHAN , YI-FENG SHIH , DAVID TRUNG DOAN , TRUNG TRI DOAN , YOSHINORI OGAWA , KOHEI OTAKE , KAZUNORI KONDO , KEIJI OHORI , TAICHI KITAGAWA , NOBUAKI MATSUMOTO , TOSHIYUKI OZAI , SHUHEI UEDA , JUNYA ISHIZAKI
IPC分类号： H01L21/683 , H01L33/40 , H01L33/62
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate [30], and forming a plurality of die sized semiconductor structures [32] on the substrate [30]. The method also includes the steps of providing a receiving plate [42] having an elastomeric polymer layer [44], placing the substrate [30] and the receiving plate [42] in close proximity with a gap [101] therebetween, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate [30] to the semiconductor layer [50] at an interface with the substrate [30] to lift off the semiconductor structures [32] through the gap [101] onto the elastomeric polymer layer [44]. During the laser lift-off (LLO) process the elastomeric polymer layer [44] functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures [32] in place on the receiving plate [42].
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公开(公告)号：US20220320366A1
公开(公告)日：2022-10-06
申请号：US17673234
申请日：2022-02-16
发明人： CHEN-FU CHU , SHIH-KAI CHAN , YI-FENG SHIH , TRUNG TRI DOAN , DAVID TRUNG DOAN , YOSHINORI OGAWA , KAZUNORI KONDO , TOSHIYUKI OZAI , NOBUAKI MATSUMOTO , TAICHI KITAGAWA
摘要： A method for fabricating semiconductor light emitting devices (LEDs) includes forming a plurality of light emitting diode (LED) structures having sidewall P-N junctions on a growth substrate, and forming an isolation layer on the light emitting diode (LED) structures having corners at intersections of the epitaxial structures with the growth substrate. The method also includes forming an etchable covering channel layer on the isolation layer, forming a patterning protection layer on the covering channel layer, forming etching channels in the covering channel layer using a first etching process, and removing the corners of the isolation layer by etching the isolation layer using a second etching process. Following the second etching process the isolation layer covers the sidewall P-N junctions. The method can also include bonding the growth substrate to a carrier and separating the growth substrate from the light emitting diode (LED) structures using a laser lift off (LLO) process.
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公开(公告)号：US20220271198A1
公开(公告)日：2022-08-25
申请号：US17740729
申请日：2022-05-10
发明人： Chen-Fu Chu , SHIH-KAI CHAN , YI-FENG SHIH , DAVID TRUNG DOAN , TRUNG TRI DOAN , YOSHINORI OGAWA , KOHEl OTAKE , KAZUNORI KONDO , KEIJI OHORI , TAICHI KITAGAWA , NOBUAKI MATSUMOTO , TOSHIYUKI OZAi , SHUHEI UEDA
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.
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4.发明公开公开(公告)号：US20240063339A1
公开(公告)日：2024-02-22
申请号：US18384020
申请日：2023-10-26
发明人： Chen-Fu Chu , SHIH-KAI CHAN , YI-FENG SHIH , DAVID TRUNG DOAN , TRUNG TRI DOAN , YOSHINORI OGAWA , KOHEI OTAKE , KAZUNORI KONDO , KEIJI OHORI , TAICHI KITAGAWA , NOBUAKI MATSUMOTO , TOSHIYUKI oZAI , SHUHEI UEDA
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/44 , H01L33/0093 , H01L2933/0025
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.
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