Angled distributed reflector optical device with enhanced light
confinement
    1.
    发明授权
    Angled distributed reflector optical device with enhanced light confinement 失效
    具有增强的光限制的角度分布式反射器光学装置

    公开(公告)号:US6122299A

    公开(公告)日:2000-09-19

    申请号:US1769

    申请日:1997-12-31

    摘要: A optical medium, such as an angled distributed reflector, e.g., an angular grating, or .alpha.-DFB laser diode or a waveguide wavelength selective filter, has a mean optical axis defining an optical cavity for substantially confined light propagation within the device. An angular grating is provided in at least a portion of the optical cavity forming a grating region permitting light to propagate along the optical cavity in two coupled waves or modes incident along the angular grating, a first incident propagating wave substantially parallel with respect to the mean optical axis and a second incident propagating wave at an angle with respect to the mean optical axis. At least one preferential coupling region in the optical cavity at an interface or boundary with the grating region to receive both propagating waves and provide for preferential treatment to the first incident propagating wave by coupling propagating light in the second incident propagating wave into the first incident propagating wave prior to light output from the medium via the non-grating region, forming a boundary with the grating region. The angle of the boundary at the interface of these respective regions is chosen to be substantially collinear with a propagation direction of the second incident propagating wave so that propagating light in the second incident propagating wave will substantially enter the preferential coupling region from the grating region via the boundary in a propagation direction substantially parallel with the mean optical axis.

    摘要翻译: 光学介质,例如角度分布式反射器,例如角度光栅或α-DFB激光二极管或波导波长选择滤光器,具有限定用于在该器件内基本上限定的光传播的光腔的平均光轴。 在光腔的至少一部分中形成角度光栅,形成光栅区域,允许光以沿着角光栅入射的两个耦合波或模式沿光腔传播,第一入射传播波相对于平均值基本平行 光轴和相对于平均光轴成一定角度的第二入射传播波。 在光腔中的与光栅区域的界面或边界处的至少一个优先耦合区域,以接收两个传播波,并且通过将第二入射传播波中的传播光耦合到第一入射传播波中来提供对第一入射传播波的优先处理 在经由非光栅区域从介质输出光之前,形成与光栅区域的边界。 选择这些各个区域的界面处的边界的角度与第二入射传播波的传播方向基本共线,使得第二入射传播波中的传播光将基本上从光栅区域经由 在传播方向上与平均光轴平行的边界。

    Laser source with submicron aperture
    2.
    发明授权
    Laser source with submicron aperture 失效
    具有亚微米孔径的激光源

    公开(公告)号:US06445723B1

    公开(公告)日:2002-09-03

    申请号:US09313444

    申请日:1999-05-18

    IPC分类号: H01S522

    摘要: A buried heterostructure (BH) laser source with a narrow active region is disclosed for use in close proximity with optically-addressed data storage media for read/write functionality in a relatively high data density format. The BH laser source is formed on a pregrooved or prepatterned substrate to form mesas upon which epitaxial layers are formed to form laser source active regions that have small emission apertures at the laser source facet output. Selective removal of semiconductor cladding material and replacement of this material with lower refractive index materials provides a way of obtaining further mode size-reduction at the output facet of the laser source. Each mesa has a top surface and adjacent sidewalls such that in the growth of the epitaxial layers above the active region doped with a first conductivity type, the above active region epitaxial layers depositing on the top surface deposit as a first conductivity type and depositing on said sidewalls deposit as a second conductivity type. This growth construction provides for a naturally formed p-n junction at the laser source active region and eliminates the need to perform a subsequent diffusion process to form such a junction. The optical cavities of the laser sources may be tapered so that die cleaving a predetermined point along the length of the optical cavity will provide the desired emission aperture size at the laser source output facet.

    摘要翻译: 公开了一种具有窄有源区的掩埋异质结构(BH)激光源,用于与光学寻址数据存储介质紧密接近,以便以相对较高的数据密度格式进行读/写功能。 BH激光源形成在预浸渍或预制图案化的衬底上以形成台面,在其上形成外延层以形成在激光源面输出处具有小发射孔径的激光源有源区。 选择性去除半导体包层材料并用较低折射率材料替代该材料提供了在激光源的输出端获得进一步的模式尺寸减小的方式。 每个台面具有顶表面和相邻的侧壁,使得在掺杂有第一导电类型的有源区上方的外延层的生长中,沉积在顶表面上的上述有源区外延层作为第一导电类型沉积并沉积在所述 侧壁沉积为第二导电类型。 该生长结构提供了在激光源有源区域处的自然形成的p-n结,并且不需要进行随后的扩散过程以形成这种结。 激光源的光腔可以是锥形的,使得沿着光腔的长度切割预定点的管芯将在激光源输出端面处提供期望的发射孔径尺寸。