公开(公告)号：US06911938B1

公开(公告)日：2005-06-28

申请号：US08832117

申请日：1997-04-03

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01Q3/40 ,  H01Q23/00 ,  H01Q25/00 ,  H04B7/204 ,  H04B7/185

CPC classification number: H04B7/2041 ,  H01Q3/40 ,  H01Q23/00 ,  H01Q25/007

Abstract: This invention reduces the number of amplifiers needed and thus reduces the weight of a multi-beam transmitting system. Each input beam is connected respectively to each switched terminal of an input switch. The fixed terminal of the input switch is connected to the input of an amplifier the output of which is connected to the fixed terminal of an output switch. Each switched terminal of the output switch is connected respectively to transmit feeds which are located off-set from the prime focus of a transmit reflector antenna. Both the input and the output switches are switched synchronously. The invention includes MMIC and high Tc superconducting transmit systems. The invention includes design to prevent single point failures and a design to transmit a large amount of RF power.

Abstract translation: 本发明减少了所需的放大器的数量，从而减少了多波束发射系统的重量。 每个输入波束分别连接到输入开关的每个开关端子。 输入开关的固定端子连接到放大器的输入端，放大器的输出端连接到输出开关的固定端子。 输出开关的每个开关端子分别连接到发射反射器天线的主焦点偏离的馈送。 输入和输出开关均同步切换。 本发明包括MMIC和高Tc超导传输系统。 本发明包括防止单点故障的设计和发射大量RF功率的设计。

公开(公告)号：US5869429A

公开(公告)日：1999-02-09

申请号：US848715

申请日：1997-05-19

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/201 ,  H01P1/203 ,  H01B12/02

CPC classification number: H01P1/2013 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A main symmetrical CPW structure is formed by depositing three parallel films of a conductor on a film of a single crystal ferroelectric material. Cavities are formed by placing irises in a main CPW structure. These cavities are tuned to a dominant resonant frequency. By the application of a bias voltage to the main CPW structure with cavities, the permittivity of the film of the ferroelectric material, underneath the CPW structure, is changed. Thus the dominant resonant frequency of the filter is changed. By changing the level of the bias voltages, different dominant resonant frequencies of the filter are obtained. Thus a tunable band pass filter is obtained. With branch cavities on a CPW structure deposited on a ferroelectric film, a tunable band reject filter is obtained.

Abstract translation: 主要对称CPW结构通过在单晶铁电材料的膜上沉积导体的三个平行膜而形成。 腔是通过将虹膜置于主CPW结构中而形成的。 这些空腔被调谐到主谐振频率。 通过对具有空腔的主CPW结构施加偏置电压，改变在CPW结构下面的铁电体的膜的介电常数。 因此，滤波器的主要谐振频率发生变化。 通过改变偏置电压的电平，可以获得滤波器的不同的主谐振频率。 从而获得可调带通滤波器。 由于在沉积在铁电体膜上的CPW结构上具有分支腔，因此获得可调带阻滤波器。

公开(公告)号：US06076001A

公开(公告)日：2000-06-13

申请号：US869929

申请日：1997-06-05

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/18 ,  H01P9/00 ,  H01B12/02

CPC classification number: H01P1/181 ,  H01P9/006 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A symmetrical coplanar waveguide is formed by a spiral with three arms. One arm is 1, the second arm is 2 and the 3rd arm is 41. The arms 1 and 2, and spiral arms 1 and 41 are separated by equal distance. The spiral arms 1, 2 and 41 are formed by the deposition of films of a conductor, layer 3, on a film 14 of a single crystal ferroelectric material, layer 2, which is deposited on a single crystal dielectric material, layer 1. Input is 10 and the output is 11. The CPW spiral arms 1, 2 and 41 form a time delay device. When a bias voltage V is applied between the spiral arms 1 and 2, and between 1 and 41 through a bias filter made of L and C, the permittivity of the ferroelectric film between the spiral arms 1 and 2, and between 1 and 41 or across the CPW, changes producing a change in the time delay. By the application of different levels of bias voltage between the spiral arms 1 and 2, and between 1 and 41, different permittivity of the ferroelectric material are obtained and thus different changes in the time delay are obtained. Thus a variable time delay is obtained. Other delay embodiments are (1) meander line, (2) square shaped structure, (3) interdigital line, (4) parallel CPW.

Abstract translation: 对称共面波导由具有三个臂的螺旋形成。 一臂为1，第二臂为2，第三臂为41.臂1和臂2以及螺旋臂1和41分开相等的距离。 螺旋臂1,2和41通过在单晶铁电体材料层2上沉积导电层3的膜形成，层2淀积在单晶介质材料层1上。输入 为10，输出为11.CPW螺旋臂1,2和41形成时间延迟装置。 当通过由L和C制成的偏置滤波器在螺旋臂1和2之间以及在1和41之间施加偏置电压V时，铁磁膜在螺旋臂1和2之间以及介于1和41之间的介电常数 在CPW之间，变化产生了时间延迟的变化。 通过在螺旋臂1和2之间以及在1和41之间施加不同电平的偏置电压，获得铁电材料的不同介电常数，从而获得不同的时间延迟变化。 因此获得可变时间延迟。 其他延迟实施例是（1）曲折线，（2）方形结构，（3）叉指线，（4）并联CPW。

公开(公告)号：US5935910A

公开(公告)日：1999-08-10

申请号：US566679

申请日：1995-12-04

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/203 ,  H01P1/208 ,  H01B12/02 ,  H01P1/209

CPC classification number: H01P1/2088 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: The high power band-pass filters are made of sections of circular waveguide resonators with sections of waveguide in between them. In the center of the waveguide resonator a ferroelectric disc, with a hole in the center, is placed. A bias is applied to the inner side of the ferroelectric disc. On the application of a bias voltage, the permittivity of the ferroelectric disc changes. As a result, the resonant frequency of the circular cavity changes. Application of different levels of bias voltages produces different resonant frequencies of the filter. The interior conducting surfaces of the waveguide(s) and the waveguide resonator(s) have high Tc superconducting material and the waveguide flanges have high Tc superconducting material on the conducting surfaces.The band-stop filters are made of a section of a main waveguide with branch waveguide resonator(s) connected on the broad-wall of the main waveguide with waveguide sections in between the resonators. A ferroelectric circular disc, with a hole in the middle, is placed in the middle of the branch guide. The branch waveguide loaded resonator is tuned to the dominant mode resonant frequency. A bias voltage is applied to the inner side of the ferroelectric disc changing the permittivity of the ferroelectric material and consequently changing the resonant frequency of the band reject filter.

Abstract translation: 高功率带通滤波器由圆形波导谐振器的部分制成，其间具有波导部分。 在波导谐振器的中心放置有在中心具有孔的铁电盘。 偏压被施加到铁电盘的内侧。 在施加偏置电压时，铁电盘的介电常数发生变化。 结果，圆形腔的谐振频率发生变化。 施加不同电平的偏置电压会产生滤波器的不同谐振频率。 波导和波导谐振器的内部导电表面具有高Tc超导材料，并且波导凸缘在导电表面上具有高Tc超导材料。 带阻滤波器由主波导的一部分构成，分支波导谐振器连接在主波导的宽壁上，波导部分在谐振器之间。 在中间有一个孔的铁电圆盘放置在分支引导件的中间。 分支波导负载谐振器被调谐到主模谐振频率。 偏置电压施加到铁电盘的内侧，改变铁电材料的介电常数，从而改变带状滤波器的谐振频率。

公开(公告)号：USD386969S

公开(公告)日：1997-12-02

申请号：US51875

申请日：1996-03-07

Applicant: Satyendranath Das

Designer： Satyendranath Das

公开(公告)号：US5496796A

公开(公告)日：1996-03-05

申请号：US309979

申请日：1994-09-20

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/202 ,  H01P1/203 ,  H01P7/04 ,  H01B12/02

CPC classification number: H01P1/2039 ,  H01P1/202 ,  H01P7/04 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: The design of a high Tc superconducting band reject tunable ferroelectric filter (TFF) is presented. The band reject TFF consists of a main microstrip line on a dielectric substrate. One or more half wavelength microstrip resonators, on a ferroelectric substrate, is coupled to the main microstrip line. At a resonant frequency of a resonator, a short circuit is presented on the main microstrip line resulting in a rejection of signal of that frequency. By applying a bias voltage to a resonator, the frequency of the resonator and, as such, the reject band of the filter is changed. Different resonators can be tuned to different frequencies.

Abstract translation: 提出了一种高Tc超导波段可调谐铁电滤波器（TFF）的设计。 带隙TFF由电介质基板上的主微带线组成。 在铁电衬底上的一个或多个半波长微带谐振器耦合到主微带线。 在谐振器的谐振频率下，在主微带线上呈现短路，导致该频率信号的抑制。 通过向谐振器施加偏置电压，谐振器的频率和滤波器的滤波器的频率被改变。 不同的谐振器可以调谐到不同的频率。

公开(公告)号：US5900390A

公开(公告)日：1999-05-04

申请号：US565031

申请日：1995-11-30

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/202 ,  H01P1/203 ,  H01P7/04 ,  H01B12/02

CPC classification number: H01P1/2039 ,  H01P1/202 ,  H01P7/04 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A coaxial cavity is loaded with a single crystal ferroelectric rod whose permittivity is dependent on the electric field in which it is immersed. Application of a bias voltage changes the permittivity of the ferroelectric rod of the cavity and thus changing the frequency of the coaxial cavity. A tunable coaxial filter is obtained. By placing the cavity in the main transmission line, a bandpass tunable filter is obtained. By placing the cavity in a branch line, a band reject tunable filter is obtained.

Abstract translation: 同轴空腔装有单晶铁电棒，其电容率取决于其浸入的电场。 施加偏置电压会改变腔的铁电杆的介电常数，从而改变同轴腔的频率。 获得可调谐同轴滤波器。 通过将空腔放置在主传输线中，获得带通可调谐滤波器。 通过将空腔放置在分支管线中，获得带状可调滤波器。

公开(公告)号：US5877123A

公开(公告)日：1999-03-02

申请号：US840879

申请日：1997-04-17

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/201 ,  H01P1/203 ,  H01B12/02

CPC classification number: H01P1/2013 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A main CPW structure is formed by depositing two parallel films of a conductor on a film of a single crystal ferroelectric material. Cavities are formed by placing irises in a main CPW structure. These cavities are tuned to a dominant resonant frequency. By the application of a bias voltage to the main CPW structure with cavities, the permittivity of the film of the ferroelectric material, underneath the CPW structure, is changed. Thus the dominant resonant frequency of the filter is changed. By changing the level of the bias voltages, different dominant resonant frequencies of the filter are obtained. Thus a tunable band pass filter is obtained. With branch cavities on a CPW structure deposited on a ferroelectric film, a tunable band reject filter is obtained.

Abstract translation: 通过在单晶铁电材料的膜上沉积导体的两个平行膜来形成主CPW结构。 腔是通过将虹膜置于主CPW结构中而形成的。 这些空腔被调谐到主谐振频率。 通过对具有空腔的主CPW结构施加偏置电压，改变在CPW结构下面的铁电体的膜的介电常数。 因此，滤波器的主要谐振频率发生变化。 通过改变偏置电压的电平，可以获得滤波器的不同的主谐振频率。 从而获得可调带通滤波器。 由于在沉积在铁电体膜上的CPW结构上具有分支腔，因此获得可调带阻滤波器。

公开(公告)号：US5703020A

公开(公告)日：1997-12-30

申请号：US606014

申请日：1996-02-12

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/18 ,  H01P9/00 ,  H01B12/02

CPC classification number: H01P1/181 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A MMIC high Tc superconducting ferroelectric phase shifter is comprised of as microstrip line on a film of a single crystal ferroelectric material. To operate the phase shifter over a desired bandwidth a quadrature band pass filter, having 1,2,3, . . . coupled lines, is coupled to the phase shifter. The microstrip lines are comprised of a high Tc superconductor such as YBCO, TBCCO.

Abstract translation: MMIC高Tc超导铁电相变器由单晶铁电材料薄膜上的微带线构成。 为了在期望的带宽上操作移相器，具有1,2,3，...的正交带通滤波器。 。 。 耦合线耦合到移相器。 微带线由高Tc超导体如YBCO，TBCCO组成。

公开(公告)号：US5496795A

公开(公告)日：1996-03-05

申请号：US291702

申请日：1994-08-16

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/203 ,  H01P1/208 ,  H01B12/02

CPC classification number: H01P1/2088 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: The design of a high Tc superconducting band pass tunable ferroelectric filter (TFF) is presented. The band pass TFF consists of an edge coupled filter on a ferroelectric substrate. Each input and output microstrip line is a quarter wavelength long. Each intermediate microstrip line is a half wavelength long with the first quarter wavelength being coupled to the preceding microstrip line and the remaining quarter wavelength being coupled to the succeeding microstrip line. Each microstrip line is connected, through an LC filter, to a common bias voltage source. Application of a bias voltage changes the frequency of operation of the filter. For matching the impedances of the input and output of the filter to the impedances of an input and output circuit respectively, matching ferroelectric quarter wavelength transformers are provided.

Abstract translation: 介绍了高Tc超导带通可调铁电滤波器（TFF）的设计。 带通TFF由铁电衬底上的边缘耦合滤波器组成。 每个输入和输出微带线是四分之一波长长。 每个中间微带线是半波长长的，其中第一个四分之一波长耦合到先前的微带线，而剩余的四分之一波长耦合到随后的微带线。 每个微带线通过LC滤波器连接到公共偏置电压源。 偏置电压的应用改变了滤波器的工作频率。 为了将滤波器的输入和输出的阻抗分别匹配输入和输出电路的阻抗，提供匹配的铁电四分之一波长变压器。