公开(公告)号：US20230134533A1

公开(公告)日：2023-05-04

申请号：US17817435

申请日：2022-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsun Park ,  Yunho Jang ,  Seonggeon Park

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/06

Abstract: A semiconductor memory device includes first and second word lines, a bit line, a source line, and a memory cell. The memory cell includes a spin-orbit torque (SOT) pattern having a first end electrically coupled to the source line, a magnetic tunnel junction pattern extending adjacent the SOT pattern, and a read transistor having a first current carrying terminal electrically coupled to a first end of the magnetic tunnel junction pattern, a second current carrying terminal electrically coupled to the bit line, and a gate terminal electrically coupled to the first word line. The memory cell also includes a write transistor having a first current carrying terminal electrically coupled to a second end of the SOT pattern, a second current carrying terminal electrically coupled to the first end of the magnetic tunnel junction pattern, and a gate terminal electrically coupled to the second word line.