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公开(公告)号：US20210136303A1
公开(公告)日：2021-05-06
申请号：US17019954
申请日：2020-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Munhwan KIM , Jooyeong GONG , Youngsun OH , Yujung CHOI , Hana CHOI
Abstract: An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.
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公开(公告)号：US20170207263A1
公开(公告)日：2017-07-20
申请号：US15408085
申请日：2017-01-17
Applicant: Samsung Electronics Co., Ltd .
Inventor： Donghyuk Park , SEUNGWON CHA , Cheolju KANG , YITAE KIM , JONGEUN PARK , JUNGCHAK AHN , Yujung CHOI
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464
Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.
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