公开(公告)号：US20150140785A1

公开(公告)日：2015-05-21

申请号：US14488883

申请日：2014-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Soo KWAK ,  Youngsu KIM ,  Sangwook PARK ,  Taeje CHO

IPC: H01L21/78 ,  H01L23/544 ,  H01L21/683 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/02013 ,  H01L21/268 ,  H01L21/6835 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate to form a semiconductor chip including each of the circuit patterns. A crystal structure of the reforming region is different from that of the initial substrate.

Abstract translation: 制造半导体器件的方法包括制备包括边缘区域和形成电路图案的中心区域的初始衬底，在初始衬底的边缘区域中形成重整区域，研磨初始衬底以形成衬底，以及 切割基板以形成包括每个电路图案的半导体芯片。 重整区域的晶体结构与初始衬底的晶体结构不同。