公开(公告)号：US20170098653A1

公开(公告)日：2017-04-06

申请号：US15182637

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Ho Koh ,  Hye-Sung Park ,  Byoung-Ho Kwon ,  Jong-Hyuk Park ,  Bo-Un Yoon ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L27/10894 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/31138 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10897

Abstract: Methods of manufacturing a semiconductor device are provided. Methods may include forming first to third regions having densities different from one another on a substrate, covering the first to third regions to form an upper interlayer insulating film including a low step portion and a high step portion higher than the low step portion, forming an organic film on the upper interlayer insulating film, removing a part of the organic film to expose an upper surface of the high step portion, removing the high step portion so that an upper surface of the high step portion is disposed on at least the same line as the organic film disposed on the upper surface of the lower step portion, removing the remaining part of the organic film to expose the upper surface of the upper interlayer insulating film and flattening the upper surface of the upper interlayer insulating film.