公开(公告)号：US20250167107A1

公开(公告)日：2025-05-22

申请号：US18775049

申请日：2024-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungeun Choi ,  Taejin Park ,  Suklae Kim ,  Cheonbae Kim ,  Sungsoo Yim ,  Yoona Jang ,  Hyunyong Jeong

IPC: H01L23/522 ,  G11C5/06 ,  H01L23/528 ,  H10B12/00

Abstract: A semiconductor device is provided. The semiconductor device includes a first structure having a memory block region and an extension region; and a second structure having a peripheral circuit region. The first structure includes memory cells and a word line. The second structure includes a semiconductor body; a through-insulating pattern in the semiconductor body; and a peripheral transistor. The first and second structures include a word line signal path electrically connecting the word line to the peripheral transistor. The word line signal path includes a word line contact that is in contact with the word line in the extension region; a word line routing lower structure electrically connected to the word line contact and extending from the extension region into the memory block region; and a word line routing connection structure electrically connecting the word line routing lower structure to the word line routing peripheral structure.