公开(公告)号：US20240130111A1

公开(公告)日：2024-04-18

申请号：US18395918

申请日：2023-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Young CHOI ,  Seung Jin KIM ,  Byung-Hyun LEE ,  Sang Jae PARK

IPC: H10B12/00 ,  G11C5/10 ,  G11C11/402

CPC classification number: H10B12/34 ,  G11C5/10 ,  G11C11/4023 ,  H01L28/91

Abstract: A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.

公开(公告)号：US20210159230A1

公开(公告)日：2021-05-27

申请号：US17032655

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Young CHOI ,  Seung Jin KIM ,  Byung-Hyun LEE ,  Sang Jae PARK

IPC: H01L27/108 ,  G11C5/10 ,  H01L49/02 ,  G11C11/402

Abstract: A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.