公开(公告)号：US09795918B2

公开(公告)日：2017-10-24

申请号：US14656645

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Ki Kim ,  Joo-Hoon Choi

IPC: B01D53/02 ,  B01D53/26 ,  H01L21/67 ,  H01L21/683

CPC classification number: B01D53/261 ,  H01L21/67034 ,  H01L21/6838

Abstract: Provided is a vacuum adsorption apparatus and a method of adsorbing a semiconductor package in a vacuum state. The vacuum adsorption apparatus includes a housing having an opening formed on its top surface, a vacuum adsorption unit disposed in the housing, and a stage formed on the opening formed in the housing and including a plurality of holes. A pressure generated from the vacuum adsorption unit is applied to the top surface of the stage through the opening and the plurality of holes.

公开(公告)号：US10784184B2

公开(公告)日：2020-09-22

申请号：US16263408

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soojung Rho ,  Chisung Oh ,  Kyomin Sohn ,  Yong-Ki Kim ,  Jong-Ho Moon ,  SeungHan Woo ,  Jaeyoun Youn

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/528 ,  H01L23/522 ,  H01L25/065

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.