公开(公告)号：US20250040122A1

公开(公告)日：2025-01-30

申请号：US18442228

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoo Ho JUNG ,  Ye Seul LEE ,  Jong Yeong MIN ,  Joon Suk PARK ,  Ji Ye BAEK ,  Jin Wook LEE

IPC: H10B12/00

Abstract: A semiconductor device includes a landing pad on a substrate; a lower electrode extending in a vertical direction on the landing pad, the lower electrode connected to the landing pad; a capacitor dielectric layer on the lower electrode; a doping layer between the lower electrode and the capacitor dielectric layer, the doping layer being in contact with each of the lower electrode and the capacitor dielectric layer, the doping layer is doped with first to third materials, the first material having a trivalent atom valence electron, the second material having a tetravalent atom valence electron, and the third material having a pentavalent atom valence electron; and an upper electrode on the capacitor dielectric layer.