公开(公告)号：US20150255336A1

公开(公告)日：2015-09-10

申请号：US14635017

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Jeong Moon ,  Woo-Cheol Noh ,  Woo-Jin Jang ,  Hun Kim ,  Hong-Jae Shin

IPC: H01L21/768

CPC classification number: H01L21/76871 ,  C23C14/185 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor device, an insulating interlayer is formed on a substrate. The insulating interlayer is partially removed to form an opening. A barrier conductive layer is formed on a sidewall and a bottom of the opening. An RF sputtering process and a DC sputtering process are performed independently on the barrier conductive layer to form a seed layer. A plated layer is formed on the seed layer.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成绝缘中间层。 部分去除绝缘中间层以形成开口。 在开口的侧壁和底部上形成阻挡导电层。 在阻挡导电层上独立地进行RF溅射工艺和DC溅射工艺以形成种子层。 在种子层上形成镀层。