公开(公告)号：US20220083515A1

公开(公告)日：2022-03-17

申请号：US17341613

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Hyeong YOON ,  Won Woo RO ,  Won Seb JEONG

IPC: G06F16/18 ,  G06F16/14 ,  G06F12/02

Abstract: A storage system includes a storage device having a nonvolatile memory with a first and a second physical address and a host configured to insert a first journal logical address and a first target logical address into a journal mapping table. The storage device includes a flash mapping table storing the first journal logical address mapped to the first physical address, and the first target logical address mapped to the second physical address; a circuit configured to write the first journal data to an area of the nonvolatile memory to the first physical address corresponding to the first journal logical address according to the first mapping state, based on the journaling command; and to change the first mapping state of the flash mapping table to a second mapping state in which the first target logical address is remapped to the first physical address, based on the checkpointing command.