公开(公告)号：US20220344393A1

公开(公告)日：2022-10-27

申请号：US17546401

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： YUJUNG CHOI ,  JUNHO SEOK ,  MUNHWAN KIM ,  WONCHUL CHOI

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

公开(公告)号：US20240334088A1

公开(公告)日：2024-10-03

申请号：US18540209

申请日：2023-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINHWA HAN ,  HEESANG KWON ,  WONCHUL CHOI

IPC: H04N25/78 ,  H04N25/46 ,  H04N25/772

CPC classification number: H04N25/78 ,  H04N25/46 ,  H04N25/772

Abstract: A pixel array includes: unit pixel groups; and two column lines provided for each column. Each of the unit pixel groups includes rows, a first pixel group comprising a plurality of pixels, a second pixel group comprising a plurality of pixels. The first pixel group and the second pixel group are arranged in a row direction. A pixel signal is output by simultaneously reading out: unit pixel groups that are connected to a first column line and that do not share a first floating diffusion region, and unit pixel groups that are connected to a second column line different from the first column line and that do not share a second floating diffusion region. At least one of the first floating diffusion region and the second floating diffusion region is between a dual conversion transistor and a reset transistor.

公开(公告)号：US20200335536A1

公开(公告)日：2020-10-22

申请号：US16917309

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US20180190692A1

公开(公告)日：2018-07-05

申请号：US15837497

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.