公开(公告)号：US20190019872A1

公开(公告)日：2019-01-17

申请号：US16121020

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Wan LIM ,  Hojong Kang ,  Joowon Park

IPC: H01L29/423 ,  H01L21/28 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11575 ,  H01L21/768 ,  H01L29/66 ,  H01L29/792 ,  H01L23/31 ,  H01L27/11582 ,  H01L23/485

Abstract: A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the conductive pattern, forming a contact hole in the filling insulation layer and adjacent to the conductive pattern, forming an opening in the conductive pattern by removing a portion of the conductive pattern adjacent to the contact hole such that the opening is connected to the contact hole, and forming a contact plug filling the contact hole and the opening. A width of the opening is greater than a width of the contact hole.