公开(公告)号：US10797099B2

公开(公告)日：2020-10-06

申请号：US16671876

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US11508771B2

公开(公告)日：2022-11-22

申请号：US17240120

申请日：2021-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-han Han ,  Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Gyeong-hee Lee ,  Hee-geun Jeong

IPC: H01L27/146 ,  H01L21/00 ,  H01L23/522

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

公开(公告)号：US20180182808A1

公开(公告)日：2018-06-28

申请号：US15835626

申请日：2017-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US11430824B2

公开(公告)日：2022-08-30

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L23/48 ,  H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US20200235156A1

公开(公告)日：2020-07-23

申请号：US16839173

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

公开(公告)号：US10483317B2

公开(公告)日：2019-11-19

申请号：US15835626

申请日：2017-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US20170040373A1

公开(公告)日：2017-02-09

申请号：US15227509

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Sang-il Jung ,  Byung-jun Park

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

Abstract translation: 集成电路（IC）装置包括在第一基板的前表面上的第一基板和第一结构。 第一结构包括第一层间绝缘层结构，其包括在第一层间绝缘层结构的不同水平处彼此间隔开的多个第一导电焊盘层。 IC器件包括在第一衬底上的第二衬底和面对第一衬底的前表面的第二衬底的前表面上的第二结构。 第二结构包括结合到第一层间绝缘层结构的第二层间绝缘层结构。 贯穿硅通孔（TSV）结构穿透第二衬底和第二层间绝缘层结构。 TSV结构与位于不同级别的多个第一导电焊盘层的至少两个第一导电焊盘层接触。