公开(公告)号：US08916914B2

公开(公告)日：2014-12-23

申请号：US13942831

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su Kim ,  Sun-hee Lee

IPC: H01L21/48 ,  H01L29/15

CPC classification number: H01L29/151 ,  H01L29/78681 ,  H01L29/78696

Abstract: A field effect transistor (FET) includes first and second channels stacked on a substrate, the first and second channels formed of a transition metal dichalcogenide, a source electrode and a drain electrode contacting both the first channel and the second channel, each of the source electrode and the drain electrode having one end between the first channel and the second channel, and a first gate electrode corresponding to at least one of the first channel and the second channel.

Abstract translation: 场效应晶体管（FET）包括堆叠在衬底上的第一和第二通道，由过渡金属二硫属元素化合物形成的第一和第二通道，与第一通道和第二通道两者接触的源电极和漏电极，源极 电极和漏电极，其一端位于第一通道和第二通道之间，第一栅电极对应于第一通道和第二通道中的至少一个。