公开(公告)号：US20140131698A1

公开(公告)日：2014-05-15

申请号：US13922814

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su KIM ,  Sun-Hee LEE

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/78681 ,  H01L29/78696

Abstract: A channel layer may include a plurality of transition metal dichalcogenide (TMD) material layers and an insulator layer between a pair of the plurality of TMD material layers.

Abstract translation: 沟道层可以包括多个过渡金属二硫族元素（TMD）材料层和在一对多个TMD材料层之间的绝缘体层。