公开(公告)号：US10008642B2

公开(公告)日：2018-06-26

申请号：US15364739

申请日：2016-11-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jong Wan Seo ,  Jin Ha Kim ,  Kwang Bok Woo ,  Dong Hoon Lee ,  Won Joon Lee ,  Sun Hwan Hwang

IPC分类号： H01L33/50 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

CPC分类号： H01L33/504 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62

摘要： A semiconductor light emitting device may include a semiconductor light emitting diode (LED) chip, a light-transmitting film on the LED chip, and a light-transmitting bonding layer between the light-transmitting film and the semiconductor LED chip. At least one of the light-transmitting film and the light-transmitting bonding layer may include a wavelength conversion material configured to convert light emitted by the semiconductor LED chip into light having a wavelength different from a wavelength of the emitted light. The light-transmitting bonding layer may have a lateral inclined region extending to the lateral surface to form an inclined surface. The semiconductor light emitting device may further include a reflective packaging portion surrounding the light-transmitting bonding layer, covering the first surface such that an electrode of the LED chip is at least partially exposed. The reflective packaging portion may include a reflective material.