公开(公告)号：US20160104814A1

公开(公告)日：2016-04-14

申请号：US14673988

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsik HWANG ,  Suhee CHAE

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/40 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/12 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes an active layer and a first semiconductor layer sequentially stacked on a second semiconductor layer and including a plurality of contact holes exposing portions of the first semiconductor layer, a plurality of first electrodes on the exposed portions of the first semiconductor layer, a second electrode on the second semiconductor layer adjacent to the contact holes, a first insulating layer on the second electrode in the first region defining at least a portion of the contact holes and insulating the plurality of first electrodes from the active layer and the second semiconductor layer, a first bonding layer on the first insulating layer, filling the contact holes and connected to the first electrodes, a second bonding layer on the second electrode, and a conductive layer including first and second portions contacting a lower surface of the first bonding layer and the second bonding layer, respectively.

Abstract translation: 半导体发光器件包括有源层和顺序层叠在第二半导体层上的第一半导体层，并且包括暴露第一半导体层的部分的多个接触孔，在第一半导体的暴露部分上的多个第一电极 层，与所述接触孔相邻的所述第二半导体层上的第二电极，所述第一区域中的所述第二电极上的第一绝缘层限定所述接触孔的至少一部分，并将所述多个第一电极与所述有源层绝缘， 第二半导体层，在第一绝缘层上的第一接合层，填充接触孔并连接到第一电极，第二电极上的第二接合层，以及包括接触第一电极的第一和第二部分的下表面的第一和第二部分的导电层 接合层和第二接合层。