公开(公告)号：US12033855B2

公开(公告)日：2024-07-09

申请号：US17322412

申请日：2021-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Hoon Kim ,  Soo Kyung Kim ,  Tae-Kyu Kim ,  Young Kuk Byun ,  Woo Jin Jung

IPC: H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/31144

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

公开(公告)号：US20220093393A1

公开(公告)日：2022-03-24

申请号：US17322412

申请日：2021-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Hoon Kim ,  Soo Kyung Kim ,  Tae-Kyu Kim ,  Young Kuk Byun ,  Woo Jin Jung

IPC: H01L21/027 ,  H01L21/311

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

公开(公告)号：US11768432B2

公开(公告)日：2023-09-26

申请号：US17407425

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Ho Yun ,  Soo Kyung Kim ,  Jaikyun Park ,  Donghoon Lee ,  Rankyung Jung ,  Soonmok Ha

IPC: G03F1/24 ,  H01L21/027

CPC classification number: G03F1/24 ,  H01L21/0274

Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.