公开(公告)号：US20190131328A1

公开(公告)日：2019-05-02

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US10770499B2

公开(公告)日：2020-09-08

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US11374047B2

公开(公告)日：2022-06-28

申请号：US16944286

申请日：2020-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.