公开(公告)号：US09633836B2

公开(公告)日：2017-04-25

申请号：US14291670

申请日：2014-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Ahn ,  Seung-Hyuk Choi ,  Kyu-Hee Han

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a dielectric layer are provided. The methods may include introducing oxygen radicals and organic silicon precursors into a chamber to form a preliminary dielectric layer on a substrate. Each of the organic silicon precursors may include a carbon bridge and a porogen such that the preliminary dielectric layer may include carbon bridges and porogens. The methods may also include removing at least some of the porogens from the preliminary dielectric layer to form a porous dielectric layer including the carbon bridges.