公开(公告)号：US20140370704A1

公开(公告)日：2014-12-18

申请号：US14291670

申请日：2014-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon AHN ,  Seung-Hyuk CHOI ,  Kyu-Hee HAN

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a dielectric layer are provided. The methods may include introducing oxygen radicals and organic silicon precursors into a chamber to form a preliminary dielectric layer on a substrate. Each of the organic silicon precursors may include a carbon bridge and a porogen such that the preliminary dielectric layer may include carbon bridges and porogens. The methods may also include removing at least some of the porogens from the preliminary dielectric layer to form a porous dielectric layer including the carbon bridges.

Abstract translation: 提供形成电介质层的方法。 所述方法可以包括将氧自由基和有机硅前体引入室中以在基底上形成预备介电层。 每个有机硅前体可以包括碳桥和致孔剂，使得预备介电层可以包括碳桥和致孔剂。 所述方法还可以包括从预备介电层中去除至少一些致孔剂以形成包括碳桥的多孔介电层。